This is a blogpost initiated by our sponsor Chipmetrics The rapid advancement of nanoelectronics is driving the transition to 3D vertical scaling, requiring ultra-thin, highly conformal films to be deposited within high-aspect ratio (HAR) structures. As these technological advances push
Atomic Layer Etch Carves the Path to More Efficient Computing
Abstract High-volume manufacturing (HVM) of atomic-scale semiconductor devices requires new approaches to deposit and etch materials in complex nano-architectures. Next-generation logic devices, including gate all-around (GAA) transistors and the conductors that link them together, must be engineered with atomic precision.