Abstract High-volume manufacturing (HVM) of atomic-scale semiconductor devices requires new approaches to deposit and etch materials in complex nano-architectures. Next-generation logic devices, including gate all-around (GAA) transistors and the conductors that link them together, must be engineered with atomic precision.
Martin E. McBriarty earned his degrees in Materials Science and Engineering (B.S., University of Florida, 2008; Ph.D., Northwestern University, 2014). His doctoral research focused on heterogeneous catalysis, and he studied at the Fritz Haber Institute from 2011-2012 as a Fulbright scholar. He completed postdoctoral research on interfacial geochemistry at Pacific Northwest National Laboratory before heading to San Jose, California to join Intermolecular, a subsidiary of Merck KGaA, Darmstadt Germany, in 2018.