Home  /    /  Plasma ALD of SiO2: film conformality and influence of ions

Plasma ALD of SiO2: film conformality and influence of ions

Leave a Comment

Plasma ALD of SiO2: film conformality and influence of ions

Karsten Arts, images (left) adapted from J. Phys. Chem. C 123, 27030–27035 (2019). DOI: 10.1021/acs.jpcc.9b08176 and data (right) adapted from Appl. Phys. Lett. 117, 031602 (2020). DOI: 10.1063/5.0015379

About Author

Bart Macco

I'm a postdoctoral researcher at the Eindhoven University of Technology with a passion for crystalline silicon photovoltaics. I have a strong affinity with the preparation and analysis of functional thin films for such cells, with special focus on transparent conductive oxides. Moreover, I'm the person managing this blog! Hope you like it!

Leave a Reply

Our sponsors

Intermolecular
Anric Technologies
Contact us at info@atomiclimits.com
X